只用于動物實(shí)驗(yàn)研究等 Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm, which fits in our substrate rack and makes batch cleaning and processing much faster and simpler. Please note that the current batch of wafers do not have a protective photoresist coating. With constant product development and improvement and for consistency and stability over long periods of time, we have had the latest batch produced without the photoresist. If you have any queries or concerns about this then please get in touch with the Ossila office as we will be happy to advise you. | Product code | Oxide (nm) | Dicing | Resistivity (Ω cm) | Usage |
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| S146 | 300 | Diced | 0.0005 to 0.001 | OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations) | | S147 | 400 | Diced | | X-ray measurements, microscopy and ellipsometry |
Datasheet Individual silicon oxide substrate (300 nm oxide).
 Wafer of diced silicon substrates (300 nm oxide).
Wafer Specifications| Wafer diameter | 200 mm (8") | | Oxide thickness tolerance | +/- 5% (both sides) | | Oxide growth | Thermally grown (dry) on both sides | | Wafer type / dopant | P / Boron | | Wafer thickness | 725 +/- 25 µm | | Wafer growth | Czochralski (CZ) | | Orientation | <1 0 0> | | Front surface | Polished | | Back surface | Etched |
Dicing Specifications| Substrate size | 20 mm x 15 mm | | Substrates per wafer | Approx. 75 complete substrates (plus partial edge pieces) | | Wafer protection | None |
Cleaning routineAs with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine: - 5 mins sonication in 1% (v/v) Hellmanex solution
- 2x dump rinse in hot water
- 5 mins sonication in IPA
- 2x dump rinse in deionised water
- N2 blow dry
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